| Job Details |
| Job Title: Device And Parametric Test Engineer |
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| Description |
Device and Parametric Test Engineer
As the oldest and one of the most respected names in the global semiconductor industry, Eden Scott’s client provide enabling technologies to power products that work smarter, run cooler, and raise the world's productivity-per-watt. Focusing leading edge technology on 6’’ and 8’’ CMOS and Power MOSFET processes, they are powering the next generation of servers and computers, cars, satellites, and home appliances.
Working within a team environment, including; US designers and technology development, Fab Process Engineers, and R&D process integration you will be responsible for developing GaN technologies for power devices and applications. You will be responsible for working as part of a team to extend capabilities of existing Fet platforms (e.g. new voltages, added features etc) and to develop new products on GaN and existing & future Silicon FET platforms.
Skills and Experience:
• Developing GaN technologies for devices required for low, medium and high voltage applications
• Support device characterization on bench using HP4156B and Keithley 4200 testers
• Develop test plans for parametric probe on Agilent 4100 and analyze data using SAS/JMP
• Device characterization, parametric data analysis
• Develop the next generation of FETs with improved performance & lower cost in the 8”Fab
• Support device characterization on bench using HP4156B and Keithley 4200 testers.
• Develop test plans for parametric probe on Agilent 4100 and analyze data using SAS/JMP
• Extend the capabilities of GaN and Silicon Fet platforms by increasing range e.g. higher & lower BV voltages
• Support Device characterization using Keithley 2400 on the bench, analyze data of parametric probe
• Electrical test and characterisation, data analysis tools viz., SAS/JMP or MS Excel, Microcal Origin
• TCAD tools for device and process simulation
The ideal candidate will be PHD qualified in physics or related subject and/or have several years’ industry experience from an R+D environment with research knowledge of compound semiconductors and devices in particular Gallium Nitride devices.
Apart from sharing in the planned growth of the Newport facility, you can expect an excellent basic salary, quarterly bonus scheme, car allowance, share options, company pension, full relocation, private health care and life insurance. Excellent career development and promotion opportunities into Director level roles exist for career committed professionals.
For further information please email your CV to Keith Tocher at keith.tocher@edenscott.com. Or call 0131 550 1130.
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Job Details
| Job Ref: |
KT - 20180_1327705207 |
| Start Date: |
ASAP |
| Hours: |
Full Time |
| Location: |
Wales, Wales |
| Working Term: |
Permanent |
| Salary (£): |
Negotiable |
| Application Deadline: |
26/02/2012 |
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